Dual junction GaInP/GaAs solar cell with enhanced efficiency using type-a InP quantum wells

Multijunction solar cells (SCs) have excellent potential to achieve higher efficiency for increased sun concentration. The two-step photon absorption in the quantum wells (QWs) can further enhance the performance of the solar cell. A GaInP/GaAs dual junction solar cell is proposed with InP QWs. The type-A InP QWs are inserted in the intrinsic region of the top cell because in the top cell, short-circuit current governs the overall cell current. The voltage preservation is applied by careful structuring of the p-i-n region at the top cell. The sub-band photon absorption enhances the external and internal quantum efficiency (QE) of the top cell, and both cells have above 90% QEs. The peak efficiencies of 44.09% under 1 sun and 48.18% under 1000 sun concentrations are achieved, and the performance is compared with the available experimental and simulated data. (© 2021 Wiley‐VCH GmbH)