Published 1996 | Version v1
Book

Molecular beam epitaxy of single crystal colossal magnetoresistive material

  • 1. Varian Associates, Palo Alto, CA (United States). E.L. Ginzton Research Center
  • 2. Univ. of Wisconsin, Madison, WI (United States). Dept. of Physics

Description

The authors have grown films of (LaSr)MnO3 (LSMO) and (LaCa)MnO3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T-1

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-304-5
Imprint Title
Epitaxial oxide thin films 2
Imprint Pagination
577 p.
Series
Materials Research Society symposium proceedings, Volume 401.
Journal Page Range
p. 467-471.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

Optional Information

Secondary number(s)
CONF-951155--.