Published December 1998
| Version v1
Journal article
Single-event burnout of epitaxial bipolar transistors
- 1. National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan)
- 2. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)
Description
Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 45
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2527-2533
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- IEEE nuclear and space radiation effects conference
- Dates
- 20-24 Jul 1998
- Place
- Newport Beach, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30034809
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FAILURES; JUNCTION TRANSISTORS; NONDESTRUCTIVE TESTING; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- MATERIALS TESTING; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-980705--