Published 1977 | Version v1
Miscellaneous Metadata-only

The inducement and rearrangement of radiation defects in ion implanted semiconductors

Creators

  • 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

Description

no abstract available

Additional details

Additional titles

Augmented title (English)
Si, Ge

Publishing Information

Imprint Place
Moscow
Imprint Title
Preliminary programme and abstracts of papers presented at the 7. international conference on atomic collisions in solids
Imprint Pagination
p. 282-283.
Report number
INIS-mf--3996

Conference

Title
7. international conference on atomic collisions in solids.
Dates
19 - 23 Sep 1977.
Place
Moscow, USSR.

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
9364001
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; ENERGY DEPENDENCE; GERMANIUM; ION IMPLANTATION; IONS; MONOCRYSTALS; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SILICON
Descriptors DEC
CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; HEAT TREATMENTS; METALS; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
Published in summary form only.