Published June 15, 1980 | Version v1
Journal article Metadata-only

Semiconducting properties of amorphous V2O5 layers deposited from gels

Creators

  • 1. Laboratoire de Physico-Chimie des Rayonnements, Universite Paris-Sud, Centre d'Orsay, 91405 Orsay Cedex, France

Description

Colloidal solutions of amorphous V2O5 are used for preparing semiconducting layers. Reasons for the high measured conductivity (sigmaapprox. =0.8--1.0 Ω-1 cm-1) are discussed. The temperature dependence of sigma is analyzed in terms of a temperature-dependent activation-energy model based upon the assumption of a random distribution of the distances between hopping sites

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
36
Journal Issue
12
Series
Appl. Phys. Lett.
Journal Page Range
986-988
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
11551748
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACTIVATION ENERGY; AMORPHOUS STATE; COLLOIDS; DATA; DEPOSITION; ELECTRIC CONDUCTIVITY; LAYERS; MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TEMPERATURE DEPENDENCE; VANADIUM OXIDES
Descriptors DEC
CHALCOGENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; ENERGY; HOMOGENEOUS MIXTURES; INFORMATION; MIXTURES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS