Effect of Silane Flow Rate on Structure and Corrosion Resistance of Ti–Si—N Thin Films Deposited by a Hybrid Cathodic Arc and Chemical Vapour Process
Creators
- 1. College of Science, Changchun University of Science and Technology, Changchun 130022 (China)
- 2. Institute of Physic, Chinese Academy of Sciences, Beijing 100080 (China)
Description
Ti–Si–N thin films with different silicon contents are deposited by a cathodic arc technique in an Ar+N2 +SiH4 mixture atmosphere. With the increase of silane Bow rate, the content of silicon in the Ti–Si–N films varies from 2.0 at. % to 12.2 at. %. Meanwhile, the cross-sectional morphology of these films changes from an apparent columnar microstructure to a dense fine-grained structure. The x-ray diffractometer (XRD) and x-ray photoelectron spectroscopy (XPS) results show that the Ti–Si–N film consists of TiN crystallites and SiNx amorphous phase. The corrosion resistance is improved with the increase of silane Bow rate. Growth defects in the films produced play a key role in the corrosion process, especially for the local corrosion. The porosity of the films decreases from 0.13% to 0.00032% by introducing silane at the Bow rate of 14sccm. (gases, plasmas, and electric discharges)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/25/11/064Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 25
- Journal Issue
- 11
- Journal Page Range
- p. 4072-4075
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44113004
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; CORROSION; CORROSION RESISTANCE; FLOW RATE; MICROSTRUCTURE; MORPHOLOGY; POROSITY; SILANES; SILICON; SILICON NITRIDES; THIN FILMS; TITANIUM NITRIDES; VAPORS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHEMICAL REACTIONS; COHERENT SCATTERING; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; FLUIDS; GASES; HYDRIDES; HYDROGEN COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS