Radiation resistance fast acting monocrystalline Bi4Ge3O12:Yb scintillators

Improving radiation resistance of fast acting monocrystalline scintillators Bi4Ge3O12 is investigated by means of activation by ytterbium in the process of monocrystal growth. It is shown that the method leads to substantial improving of BGO monocrystal radiation resistance up to 106 Gy and causes appearance in scintillations of a component with small time of luminescence of 13-30 ns. The conclusion is made that the BGO:Yb monocrystals are perspective scintillation material for detection systems of total absorption