Published December 23, 1980 | Version v1
Patent Metadata-only

Reducing the switching time of semiconductor devices by neutron irradiation

Creators

Description

The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 MeV. To a dosage between 1 X 1011 and 1 X 1015 neutrons per square centimeter. The irradiation is preferably to a dosage between 1 X 101 and 1 X 1014 neutrons per square centimeter and preferably has substantial energy greater than 14 mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 500C. Higher than the highest specified temperature

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Additional titles

Augmented title (English)
Patent

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl.H01L 21/263.
IPC
Int. Cl.H01L 21/263.
Patent number
US patent document 4,240,844/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
12616366
Subject category
S42: ENGINEERING;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
ANNEALING; IRRADIATION; NEUTRONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SWITCHING CIRCUITS
Descriptors DEC
BARYONS; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HEAT TREATMENTS; NUCLEONS; RADIATION EFFECTS