Published December 2010
| Version v1
Journal article
Radiation effects in nanoelectronic elements
- 1. Moscow Engineering Physics Institute (National Research Nuclear University) (Russian Federation)
- 2. Moscow Institute of Electronic Technology (Technical University) (Russian Federation)
Description
Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 44
- Journal Issue
- 13
- Journal Page Range
- p. 1699-1702
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43039977
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; DEFECTS; DEPOSITION; FIELD EFFECT TRANSISTORS; FILMS; GALLIUM ARSENIDES; IONIZING RADIATIONS; NANOTUBES; SUBSTRATES; TITANIUM
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; GALLIUM COMPOUNDS; METALS; NANOSTRUCTURES; NONMETALS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2010 Pleiades Publishing, Ltd.