Published October 1983 | Version v1
Journal article Metadata-only

Proton bombardment in n- and p-type Gasub(0.47)Insub(0.53)As

Creators

  • 1. Institute of Semiconductor Electronics, Aachen (Germany, F.R.)

Description

Gasub(0.47)Insub(0.53)As epitaxial layers on InP substrate have been subjected to proton bombardment. The resistivity increases up to 104 Ω cm for 1014 H+/cm2 in p-type and 3.1016H+/cm2 in n-type Gasub(0.47)Insub(0.53)As implanted at 77 K. Proton bombardment at 300 K showed this increase in resistivity only for p-type material. Channeling experiments indicated that the damage of the lattice which seems to be responsible for the resistivity increase of n-material can be produced only at low temperature with doses of the order of 1016 H+/cm2. Crystalline layers implanted with high dose showed blistering effects after heat treatments. (author)

Additional details

Publishing Information

Journal Title
Solid-State Electron.
Journal Volume
26
Journal Issue
10
Series
Solid-State Electron.
Journal Page Range
1033-1037
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
15011411
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; BLISTERS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION IMPLANTATION; LAYERS; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON CHANNELING; PROTONS; SUBSTRATES; VERY LOW TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CATIONS; CHANNELING; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; INDIUM COMPOUNDS; IONS; MATERIALS; NUCLEONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS