Published September 30, 2013 | Version v1
Journal article

Strain relaxation in epitaxial SrRuO3 thin films on LaAlO3 substrates

  • 1. State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
  • 2. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA and Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States)

Description

Strain relaxation behavior of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO3 thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
14
Journal Page Range
p. 141901-141901.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2013 AIP Publishing LLC