Published July 2008 | Version v1
Journal article

Pressure-induced effect on electronic excitations in osmium

  • 1. Institute of Metal Physics UD RAS, 620041, S. Kovalevskaya str. 18, Ekaterinburg (Russian Federation)
  • 2. Geophysical Laboratory CIW, 5251 Broad Branch Rd., N.W., Washington, D.C. 20015 (United States)

Description

Electronic Raman scattering has been studied in single crystals of 5d transition metal osmium under pressures up to 60 GPa in the temperature range of 10-300K. With the use of green and blue excitation wavelengths we observe an appearance of well-defined electronic peaks at ∼ 580 cm-1 for wave vector direction q parallel [0001]] and at ∼ 350 cm-1 for q parallel [101-bar 0] in the pressure range of 20-30 GPa. It was shown in our combined experimental and theoretical investigation that a consideration of both a renormalization of the electron self-energies near the Fermi level and a change in the Fermi surface under pressure and temperature variation is needed to describe the observed spectra

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/121/4/042001

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
121
Journal Issue
4
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
Joint 21. AIRAPT and 45. EHPRG international conference on high pressure science and technology
Dates
17-21 Sep 2007
Place
Catania (Italy)