Published September 2003
| Version v1
Journal article
Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters
- 1. AS RU, Heat Physics Department, Tashkent (Uzbekistan)
Description
On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)
Additional details
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 5
- Journal Issue
- 2-3
- Journal Page Range
- p. 164-170
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 36026232
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONFIGURATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; FERMI LEVEL; FRENKEL DEFECTS; METASTABLE STATES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; ENERGY LEVELS; EXCITED STATES; MATERIALS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY; VACANCIES
Optional Information
- Notes
- 14 refs., 6 figs.