Robust topological surface state in Kondo insulator SmB6 thin films
Creators
- 1. Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)
- 2. Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742 (United States)
- 3. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708 (United States)
- 4. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- 5. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)
Description
Fabrication of smooth thin films of topological insulators with true insulating bulk are extremely important for utilizing their novel properties in quantum and spintronic devices. Here, we report the growth of crystalline thin films of SmB6, a topological Kondo insulator with true insulating bulk, by co-sputtering both SmB6 and B targets. X-ray diffraction, Raman spectroscopy, and transmission electron microscopy indicate films that are polycrystalline with a (001) preferred orientation. When cooling down, resistivity ρ shows an increase around 50 K and saturation below 10 K, consistent with the opening of the hybridization gap and surface dominated transport, respectively. The ratio ρ2K/ρ300K is only about two, much smaller than that of bulk, which indicates a much larger surface-to-bulk ratio. Point contact spectroscopy using a superconductor tip on SmB6 films shows both a Kondo Fano resonance and Andeev reflection, indicating an insulating Kondo lattice with metallic surface states
Additional details
Identifiers
- DOI
- 10.1063/1.4902865;
- arXiv
- arXiv:1408.5413v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 22
- Journal Page Range
- p. 222403-222403.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46108167
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GRAIN ORIENTATION; KONDO EFFECT; POLYCRYSTALS; RAMAN SPECTROSCOPY; SAMARIUM BORIDES; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; FILMS; LASER SPECTROSCOPY; MATERIALS; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; RARE EARTH COMPOUNDS; SAMARIUM COMPOUNDS; SCATTERING; SPECTROSCOPY
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC