Published July 30, 2009 | Version v1
Journal article

Surface termination of the NdGaO3(1 1 0)

  • 1. Leibniz Institute for Crystal Growth, Max Born Strasse 2, D-12489 Berlin (Germany)
  • 2. Department of Physics, Humboldt University, Newtonstrasse 15, D-12489 Berlin (Germany)

Description

Auger electron spectroscopy using excitation via grazing impact of protons was applied to determine the elemental composition of the topmost and near-surface layers of a NdGaO3(1 1 0) substrate. The preparation conditions of vicinal NdGaO3 substrates were optimized by varying the annealing temperature, time, and gas atmosphere. Well prepared surfaces show regularly arranged, atomically smooth terraces with single-atomic steps. The surfaces were always NdO terminated with a small amount of Ga (2-4%) atoms on the surface. A Ga and O depletion layer with a thickness of about 4 nm has been detected at optimized preparation conditions.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2009.06.052

Additional details

Identifiers

DOI
10.1016/j.apsusc.2009.06.052;
PII
S0169-4332(09)00847-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
20
Journal Page Range
p. 8685-8687
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.