Published August 9, 2010
| Version v1
Journal article
Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor
Creators
- 1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093 (China)
Description
We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2010.07.026Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2010.07.026;
- PII
- S0375-9601(10)00851-0;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 374
- Journal Issue
- 36
- Journal Page Range
- p. 3758-3761
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42042964
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRODES; MAGNETORESISTANCE; QUANTUM DOTS; SPIN; SPIN ORIENTATION; TRANSISTORS; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; NANOSTRUCTURES; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.