Pattern formation in dielectric barrier discharges with different dielectric materials
- 1. College of Physics Science and Technology, Hebei University, Baoding 071002 (China)
- 2. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing 102600, Beijing (China)
Description
The influence of dielectric material on the bifurcation and spatiotemporal dynamics of the patterns in dielectric barrier discharge in argon/air at atmospheric pressure is studied. It is found that pattern bifurcation sequences are different with different dielectric materials. The spatiotemporal dynamics of the hexagonal pattern in dielectric barrier discharge depends on the dielectric material. The hexagon pattern with glass dielectric is an interleaving of two rectangular sublattices appearing at different moments. The hexagon pattern with quartz dielectric is composed of one set of hexagonal lattice discharging twice in one half cycle of the applied voltage, one is at the rising edge and the other at the falling edge. It results in that the accumulation of wall charges in individual microdischarges in a hexagon pattern with quartz dielectric is greater than that with glass dielectric, which is in agreement with the electron density measurement by Stark broadening of Ar I 696.54 nm.
Additional details
Identifiers
- DOI
- 10.1063/1.3566003;
Publishing Information
- Journal Title
- Physics of Plasmas
- Journal Volume
- 18
- Journal Issue
- 3
- Journal Page Range
- p. 033506-033506.6
- ISSN
- 1070-664X
- CODEN
- PHPAEN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43016339
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- AIR; ARGON; ATMOSPHERIC PRESSURE; BIFURCATION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC DISCHARGES; QUARTZ
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; FLUIDS; GASES; MATERIALS; MINERALS; NONMETALS; OXIDE MINERALS; PHYSICAL PROPERTIES; RARE GASES
Optional Information
- Notes
- (c) 2011 American Institute of Physics