Hydrogen ion implantation profiles as determined by SIMS

By careful instrument design and attention to experimental conditions, SIMS has been shown to be capable of performing hydrogen depth profiles in silicon with a sensitivity to 5x1017 at/cm3 and a depth resolution of the order of 100 A. This capability has been used to analyze H+ and H2+ implants into silicon over a wide range of energies and doses. For fluences of 1015 at/cm2 and below, there are no observable differences in the range for H+ and H2+. Electronic stopping powers for hydrogen in silicon have been determined to be 1.55 times the values tabulated by Northcliffe and Schilling. (Auth.)