Published May 2000 | Version v1
Journal article Metadata-only

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 μm wavelength range

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
  • 2. Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin (Germany)

Description

A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 μm wavelength region. The influence of growth conditions on structural and optical characteristics was studied. The proposed structures show promise in developing vertical-cavity surface-emitting devices

Additional details

Identifiers

DOI
10.1134/1.1188034;

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
5
Journal Page Range
p. 594-597
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051882
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DATA; EMISSION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 612-616 (No. 5, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.