Detector of ionizing irradiation on the basis of GaS_xSe₁-x

In order to manufacture radiation detectors, we conducted a study of changes in dark resistance (or current) in the process of irradiation with electrons and gamma-quanta in GaS_xSe₁-x single crystals. Because of this, X= 0; 0.05; 0.15; 0.2; 0.25 studied the change of dark resistance during electron irradiation. In monocrystals of the solid solution GaS₀.25Se₀.75, the maximum change and rapid recovery of the dark resistance was detected. As a sensitive element for the manufacture of radiation detectors, we used the solid solution GaS₀.25Se₀.75. The sides of high-power gamma radiation and beta-particle streams do not meet the requirements imposed on them at the present time. Extending the range of measurements towards high energies and power doses of registered radiation is difficult, mainly due to the fact that large streams of radiation cause irreversible changes in the sensitive element. In other words, after carrying out the first measurement, the sensitive element changes its properties and the detector turns out to be unsuitable for subsequent measurements.