Published December 1972
| Version v1
Journal article
Radiation-hardened complementary MOS using SiO2 gate insulators
Creators
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 19
- Journal Issue
- 6
- Series
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci.
- Journal Page Range
- 271-274
- ISSN
- 0018-9499
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 24 Jul 1972.
- Place
- Seattle, Washington, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4077237
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FABRICATION; INTEGRATED CIRCUITS; MOS TRANSISTORS; RADIATION HARDENING
- Descriptors DEC
- ELECTRONIC CIRCUITS; HARDENING; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- See CONF-720707--.; Updated automatically by Metadata and Full-Text Enrichment Agent