Published 1989
| Version v1
Journal article
Infrared absorption by two dimensional holes in GaAs-(ALx Ga1-x)As quantum well structures
- 1. Viet Nam National Atomic Energy Commission, Hanoi (Viet Nam)
Description
The coefficient of infrared absorption by 2 D holes in GaAs-(ALx Ga1-x)As quantum well structures is calculated. The contributions of intra subband as well as inter subband transitions are taken into account. It is shown that, on the absorption spectrum there is a sharp peak related by inter subband transitions. With increasing of temperature this peak is not sharp. The obtained results are agreed with experiment data. (author). 7 refs., 6 figs
Additional details
Additional titles
- Original title (Vietnamese)
- Hap thu hong ngoai xa boi cac lo trong hai chieu trong ho the luong tu p-GaAs(Al
Publishing Information
- Journal Title
- Tap Chi Vat Ly
- Journal Volume
- 14
- Journal Issue
- 2
- Journal Page Range
- p. 21-25.
- ISSN
- 0378-8814
- CODEN
- TCVLDQ
INIS
- Country of Publication
- Viet Nam
- Country of Input or Organization
- Viet Nam
- INIS RN
- 25076732
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ABSORPTION SPECTRA; ENERGY-LEVEL TRANSITIONS; HOLES; SUPERLATTICES; THEORETICAL DATA
- Descriptors DEC
- DATA; INFORMATION; NUMERICAL DATA; SPECTRA