Field-induced Mott-transition by electrostatic doping

Band-filling-controlled Mott transition at an interface of an organic field effect transistor is presented. Conductance and Hall coefficient of a thin crystal of an organic Mott-insulator laminated onto a SiO2/Si substrate were measured under varying gate voltage at low temperature. The carrier density a finite positive gate voltages corresponds to that of a metallic state of this material, which indicates the electric-field induced Mott transition at the interface. (author)