Published May 1997 | Version v1
Journal article

Threshold effect of local pulsed laser irradiation on the surface state of oxide layers deposited on real germanium surfaces

  • 1. Physics Faculty, M.V. Lomonosov Moscow State University, 119899 Moscow (Russian Federation)
  • 2. Institute of Electrical Engineering and Electronics, Russian Academy of Sciences, 141120 Fryazino (Russian Federation)

Description

Data are presented from a study of changes in the spectra of surface states on real (with a thin oxide layer) germanium surfaces irradiated by localized (10-100 μm), pulsed (0.1-1 μs) laser light which heats the surface by an estimated ∼20-40 K. It is shown that the thresholds for plastic deformation in the surface region of the semiconductor (due to the resulting local thermal stresses) correspond to threshold changes in the optical charging spectra of slow surface states of the insulator, while no threshold changes are observed for the fast states. The nature of this effect is discussed

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
31
Journal Issue
5
Journal Page Range
p. 433-434
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31, 515-516 (May 1997); (c) 1997 American Institute of Physics.