Published March 1991 | Version v1
Journal article

Characterization of NbN films and tunnel junctions

  • 1. Center for Space Microelectronics Technology, Jet Propulsion Lab., California Inst. of Technology, Pasadena, CA (United States)

Description

This paper discusses properties of NbN films and NbN/MgO/NbN tunnel junctions. NbN junctions are being developed for use in high-frequency, superconductor-insulator-superconductor (SIS) quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RmA), and it is found to vary by more than a factor of two (35--85 fF/Μm2) over the range of RmA measured (1000--50 Ωμm2). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RmA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured

Additional details

Publishing Information

Journal Title
IEEE Transactions on Magnetics
Journal Volume
27
Journal Issue
2
Series
IEEE Trans. Magn.
Journal Page Range
3196-3199
ISSN
0018-9464
CODEN
IEMGA

Conference

Title
1990 applied superconductivity conference.
Dates
24-28 Sep 1990.
Place
Snowmass, CO (United States).

Optional Information

Secondary number(s)
CONF-900944--.