Published July 2020 | Version v1
Journal article

The Influence of Defects on the Absorption of Terahertz Radiation in a CdSiP2 Single Crystal

  • 1. Prokhorov General Physics Institute, Russian Academy of Sciences (Russian Federation)
  • 2. Physical Faculty, Lomonosov Moscow State University (Russian Federation)
  • 3. Institute of Solid State Physics, Russian Academy of Sciences (Russian Federation)
  • 4. Bauman Moscow State Technical University (Russian Federation)
  • 5. BAESystems, Inc. (United States)

Description

The transmission and reflection spectra of a CdSiP2 single crystal are measured in the temperature interval from 80 to 300 K using the terahertz (THz) pulsed and infrared Fourier spectroscopy methods. A significant influence of postgrowth defects on the absorption in the THz frequency range is revealed. This absorption is found to depend weakly on temperature compared to that observed previously for other chalcopyrite crystal with substantially lower concentration of defects. Upon cooling, intrinsic absorption mechanisms are minimized, and the contribution of defects to absorption is separated.

Additional details

Identifiers

Publishing Information

Journal Title
Optics and Spectroscopy
Journal Volume
128
Journal Issue
7
Journal Page Range
p. 1004-1009
ISSN
0030-400X
CODEN
OPSUA3

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Copyright
Copyright (c) 2020 © Pleiades Publishing, Ltd. 2020