Published January 12, 1987
| Version v1
Journal article
Mesotaxy: Single-crystal growth of buried CoSi2 layers
- 1. ATandT Bell Laboratories, Murray Hill, New Jersey 07974
Description
Buried single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations: those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi2
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 50
- Journal Issue
- 2
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 95-97
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18045058
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; COBALT SILICIDES; CRITICAL TEMPERATURE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; EPITAXY; EXPERIMENTAL DATA; FABRICATION; ION IMPLANTATION; LAYERS; SUPERCONDUCTING FILMS; TRANSITION TEMPERATURE
- Descriptors DEC
- COBALT COMPOUNDS; DATA; ELECTRICAL PROPERTIES; FILMS; HEAT TREATMENTS; INFORMATION; NUMERICAL DATA; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS