Defect formation kinetics in irradiated silicon at 300 K

From charged-particle irradiation experiments with silicon at room-temperature it is concluded that the lifetime tau depends on particle fluence phi as 1/tau varies as phisup(n) with 0.5 =< n < 1. On the assumption that the lifetime is controlled by divacancies, a kinetic model is proposed of secondary-defect formation from vacancy-interstitial pairs, describing the experimental law found. (author)