Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization
Creators
- 1. ASM Microchemistry Ltd., FIN-02631 Espoo (Finland)
- 2. Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Korea (Korea, Republic of)
- 3. School of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
Description
The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min
Additional details
Identifiers
- DOI
- 10.1063/1.1585111;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 25
- Journal Page Range
- p. 4486-4488
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048075
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL STRUCTURE; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN CARBIDES; TUNGSTEN NITRIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.