Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization

The formation mechanism of electroless deposited Co(W,P) films is investigated. Co(W,P) films, containing 88-90 at% of Co and 10-12 at% of W and P, are deposited directly onto p-type Si(100) substrate via Pd wet activation. Co(W,P) initially nucleates around Pd activation sites and this is followed by a strong lateral growth. Uniform Co(W,P) thin films can be obtained after 2 min deposition. Fast immersion measurement shows that the mixed potential of Co(W,P) is -0.78 V versus Ag/AgCl electrode. XRD examination shows that the Pd layer has a domination of (111) texture and the principle microstructure of the as-deposited Co(W,P) film is the hcp phase of nano-sized ε-Co. The inelastic mean free path of diffused Cu in Co(W,P) is determined to be 7.37 A which is significantly smaller than that (9.9 A) in pure Co, indicating that Co(W,P) is a very effective barrier layer. - Graphical abstract: Strong lateral coalescence of Co(W,P) nuclei after 3 s deposition