Structural investigations into chemoepitaxial CdSe and CdTe films on cadmium substrates

Conditions of oriented growing of compounds formed on cadmium monocrystal films (substrates) as a result of their diffusion saturation with selenium or tellurium vapours and widely used for the production of certain electronic instruments, are studied. Chemoepitaxy of CdSe and CdTe phases formed as a result of reaction diffusion in systems Cd-Se and Cd-Te is possible, however, the degree of their oriented growing is not high (especially of CdTe) owing to high oversaturation of mother phase (adsorption layer in this case) with diffusing component (cadmium), their formation in adsorption layer and weak adhesion to the substrate. CdSe and CdTe nuclei in the range of epitaxial temperatures increase mainly by the Folmer-Weber mechanism. Inner strains in the growing compounds are close to the substrate fluidity limit. To improve chemoepitaxial growth of CdSe and CdTe oversaturation and diffusion rate of cadmium should be decreased and adhesion of the phases to cadmium substrate should be increased