Published 2002
| Version v1
Miscellaneous
InNAs - a new optoelectronic material for mid-IR applications
Creators
- 1. Center for High Technology Materials, University of New Mexixo, Albuquerque (United States)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 210 p.
- Journal Page Range
- p. 35
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 14-18 Oct 2002
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075279
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIDES; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DETECTION; ENERGY GAP; GALLIUM ARSENIDES; INDIUM COMPOUNDS; INFRARED SPECTRA; NITRIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; SUBSTRATES; SURFACE PROPERTIES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SPECTRA; SURFACE COATING