Published July 1995
| Version v1
Journal article
Structure of indium sulfide layers on InAs
- 1. Voronezhskaya Gosudarstvennaya Tekhnologicheskaya Akademiya, Voronezh (Russian Federation)
Description
Technological conditions of formation of In2C3 monocrystalline layers at InAs surface with 2.0-5.0 nm dimensions of transition range in heterostructure using hetero valent substitution technique, are determined. Orientation of In2S3 layer in the boundary range of indium and arsenide is shown to differ from that of the substrate and of the layer external surface. Assumption about reconstruction of InAs surface during thermal treatment of InAs in sulfur vapours is made
Additional details
Additional titles
- Original title (Russian)
- Структура слоев сульфида индия ма поверхности InAs
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 31
- Journal Issue
- 7
- Journal Page Range
- p. 891-895.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 27021784
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CUBIC LATTICES; INDIUM ARSENIDES; INDIUM SULFIDES; LAYERS; MONOCRYSTALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; INDIUM COMPOUNDS; PNICTIDES; SULFIDES; SULFUR COMPOUNDS