Published 1993 | Version v1
Miscellaneous Metadata-only

Change of polysilicon film characteristics under P and Ar intensive implantation and annealing

Creators

Description

Short communication

Part of:
Thesises of the proceedings of the 23. International meeting on the physics of charged particle interaction with crystals

Additional details

Additional titles

Original title (Russian)
Изменение характеристик пленок поликремния при интенсивной имплантации П или Ар и отжиге

Publishing Information

Imprint Title
Thesises of the proceedings of the 23. International meeting on the physics of charged particle interaction with crystals
Imprint Pagination
148 p.
Journal Page Range
p. 76.
Report number
INIS-RU--377

Conference

Title
23. International meeting on the physics of charged particle interaction with crystals.
Original Conference Title
23. Mezhnatsional'noe soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
31 May - 2 Jun 1993.
Place
Moscow (Russian Federation).

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25054250
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; ARGON IONS; FILMS; ION IMPLANTATION; KEV RANGE 100-1000; PHOSPHORUS IONS; POLYCRYSTALS; RADIATION DOSES; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K
Descriptors DEC
CHARGED PARTICLES; CRYSTALS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; SEMIMETALS; TEMPERATURE RANGE

Optional Information