Published January 26, 1992
| Version v1
Journal article
Subthreshold effects with phase state modifications in silicon
- 1. AN Uzbekskoj SSR, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
Description
For the first time is obtained slowly developing phase transition (PT) Si-SiO2 in dislocationless silicon with oxygen concentration ≤1016 cm-3. The PT does not depend on the type and concentration of a main doping impurity. PT formation process begins in the field of x radiation and continues at prolonged keeping after irradiation ending. Maximal energy of X-quanta of continuous spectrum is 50 keV, the power density is 1 Wxcm-2
Additional details
Additional titles
- Original title (Russian)
- Подпороговые эффекты с модификациями фазовых состояний в кремнии
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 18
- Journal Issue
- 2
- Journal Page Range
- p. 61-64.
- ISSN
- 0320-0116
- CODEN
- PZTFDD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25005516
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BORON ADDITIONS; IMAGES; MONOCRYSTALS; PHASE STUDIES; PHASE TRANSFORMATIONS; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON OXIDES; X RADIATION
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS