Published 2000 | Version v1
Miscellaneous Metadata-only

In situ investigation of phase transitions of implanted silicon at powerful light irradiation

Creators

  • 1. Kazan Physical Technical Institute, Russian Academy of Sciences, Kazan (Russian Federation)

Description

no abstract available

Part of:
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000

Additional details

Publishing Information

Imprint Title
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Imprint Pagination
120 p.
Journal Page Range
p. 30

Conference

Title
3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Dates
12-15 Jun 2000
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32029996
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ANNEALING; HEAT TREATMENTS; ION IMPLANTATION; LASER RADIATION; MELTING; PHASE TRANSFORMATIONS; RECRYSTALLIZATION; SILICON
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS

Optional Information