Published July 2011 | Version v1
Journal article Metadata-only

Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

Creators

  • 1. Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan, 411105 (China)
  • 2. ASIC R and D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan, 410073 (China)
  • 3. Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, British Columbia, Canada V8L 4B2 (Canada)

Description

The SrTiO3 (STO) thin films on a Pt/Ti/SiO2/Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current Icc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/26/7/075019

Additional details

Identifiers

DOI
10.1088/0268-1242/26/7/075019;
PII
S0268-1242(11)81054-0;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
26
Journal Issue
7
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014449
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPLIANCE; INTERFACES; SILICON OXIDES; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; FILMS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS