Published July 1998 | Version v1
Journal article

Shockwave-induced plasticity via large-scale nonequilibrium molecular dynamics

Creators

  • 1. Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Description

Nonequilibrium molecular-dynamics (MD) simulations of shock waves in single crystals have shown that, above a threshold strength, strongly shocked crystals deform in a very simple way. Rather than experiencing massive deformation, a simple slippage occurs at the shock front, relieving the peak shear stress, and leaving behind a stacking fault. Later calculations quantified the apparent threshold strength, namely the yield strength of the perfect crystal. Subsequently, pulsed x-ray experiments on shocked single crystals showed relative shifts in diffraction peaks, confirming our MD observations of stacking faults produced by shockwave passage. With the advent of massively parallel computers, we have been able to simulate shock waves in 10-million atom crystals with cross-sectional dimensions of 100x100 fcc unit cells (compared to earlier 6x6 systems). We have seen that the increased cross-section allows the system to slip along all of the available {111} slip planes, in different places along the now non-planar shock front. These simulations conclusively eliminate the worry that the kind of slippage we have observed is somehow an artifact of transverse periodic boundary conditions. Thus, future simulations are much more likely to show that weak-shock plasticity is nucleated by pre-existing extended defects embedded in the sample. copyright 1998 American Institute of Physics

Additional details

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
429
Journal Issue
1
Journal Page Range
p. 173-178
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
Meeting of the topical group on shock compression of condensed matter of the American Physical Society
Dates
27 Jul - 1 Aug 1997
Place
Amherst, MA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30021362
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DISLOCATIONS; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; PLASTICITY; SHOCK WAVES; SLIP; STACKING FAULTS; YIELD STRENGTH
Descriptors DEC
CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; LINE DEFECTS; MECHANICAL PROPERTIES

Optional Information

Secondary number(s)
CONF-970707--