Published May 21, 2011 | Version v1
Journal article

Characterization and simulation of different SiPM structures produced at FBK

  • 1. Fondazione Bruno Kessler (FBK-IRST), Via Sommarive 18, I-38123 Trento (Italy)
  • 2. Department of Information Engineering and Computer Science, University of Trento, Via Sommarive 14, I-38123 Povo di Trento (Italy)
  • 3. Department of Physics, University of Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy)

Description

The silicon photomultiplier (SiPM) is one of the most interesting solid-state detectors for very low-level light detection featuring extremely fast timing response. In FBK we manufactured SiPMs with different micro-cell proprieties such as: size, layout and epi-layer thickness. We characterized both statically and dynamically all devices to understand the impact of each parameter on the signal shape and charge. In this paper we report on the impact of the metal layer layout on the signal shape and gain. We will show both experimental results as well as SPICE simulations.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2009.10.030

Additional details

Identifiers

DOI
10.1016/j.nima.2009.10.030;
PII
S0168-9002(09)01935-4;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
617
Journal Issue
1-3
Journal Page Range
p. 417-419
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
11. Pisa meeting on advanced detectors
Dates
24-30 May 2009
Place
La Biodola, Elba (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42009434
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
EQUIPMENT; GAIN; LAYERS; PHOTOMULTIPLIERS; RADIATION DETECTION; SHAPE; SIGNALS; SILICON; SIMULATION; THICKNESS
Descriptors DEC
AMPLIFICATION; DETECTION; DIMENSIONS; ELEMENTS; PHOTOTUBES; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.