Published 2000
| Version v1
Journal article
Dielectric characteristics of thermally oxidized Ta2O5 thin films
- 1. Institute of Physics, Faculty of Natural Sciences and Mathematics, St. 'Cyril and Methodius' University, Skopje (Macedonia, The Former Yugoslav Republic of)
- 2. Institute of Solid State Physics, BAN, Sofia (Bulgaria)
Description
Dielectric characteristics of Ta2O5 films, thermally oxidized at 673-873 K on RF sputtered tantalum on p-Si substrate, with thickness of 100-165 nm were investigated. Leakage currents for both gate polarities were decreasing with the increasing of the oxidation temperature and achieved the value of 10-7 A/cm2 at 3 MV/cm applied effective field. Dominating current mechanism for lower and medium fields was Pool-Frenkel emission, and at high fields Fowler-Nordheim tunneling appeared. [Original)
Additional details
Publishing Information
- Journal Title
- Physica Macedonica
- Journal Volume
- 50
- Journal Page Range
- p. 59-64
- ISSN
- 1409-7168
INIS
- Country of Publication
- North Macedonia, Republic of
- Country of Input or Organization
- North Macedonia, Republic of
- INIS RN
- 33009601
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CURRENT DENSITY; DEPOSITION; DIELECTRIC PROPERTIES; EXPERIMENTAL DATA; FOWLER-NORDHEIM THEORY; OXIDATION; SILICON; SPUTTERING; TANTALUM OXIDES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; DATA; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; INFORMATION; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 8 refs., 1 tab., 3 figs.
- Funding organization
- Ministry of Science of the Republic of Macedonia, Skopje (Macedonia, The Former Yugoslav Republic of)