Effect of Sb content on the thermoelectric properties of annealed CoSb3 thin films deposited via RF co-sputtering
Creators
- 1. Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)
- 2. Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of)
Description
Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb2 phase possess the largest power factor. - Abstract: A series of CoSb3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb2 and CoSb3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb3 thin films. The CoSb2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb3 thin films. We report maximum power factor of 7.92 mW/m K2 for the CoSb2-containing mixed phase thin film and 1.26 mW/m K2 for the stoichiometric CoSb3 thin film.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.02.210Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.02.210;
- PII
- S0169-4332(17)30583-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 408
- Journal Page Range
- p. 88-95
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48078126
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIMONY COMPOUNDS; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY; POWER FACTOR; SCANNING ELECTRON MICROSCOPY; SPUTTERING; STOICHIOMETRY; TEMPERATURE DEPENDENCE; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES; SCATTERING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.