A theory of density-of-states effective masses in heavily doped silicon at high temperatures and its applications

A theory of density-of-states effective masses in the n(p)-type heavily doped silicon at high temperatures, T, was developed, taking into account the effects of nonparabolicity in the band and Fermi-Dirac statistics. It was applied to determine the intrinsic carrier density at 200≤T (K)≤500 accurate to within 4.8%, and at 300 K semi-empirical forms for band gap narrowing (BGN) and apparent BGN with an accuracy of 17% and for optical gap with a precision of 1%, giving rise to a satisfactory description of both electrical and optical data. Furthermore, at 280≤T (K)≤400, the BGN can be assumed to be T-independent, with a precision of 8.8%