Published 1992
| Version v1
Journal article
Behavior of electronics devices irradiated by protons in the energy range 50-500 MeV
Creators
- 1. CEA Centre d'Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d'Electronique et d'Instrumentation Nucleaire
Description
After a short description of the space environment and the effects induced by protons on electronics devices, the irradiation line used to simulate this environment is described and some results of cross-sections obtained on SRAM are given
Additional details
Additional titles
- Original title (French)
- Comportement des composants electroniques aux flux de protons dans la gamme d'energie 50-500 MeV
Publishing Information
- Journal Title
- Annales de Chimie. Science des Materiaux (Paris)
- Journal Volume
- 17
- Journal Issue
- 7-8
- Journal Page Range
- p. 507-520.
- ISSN
- 0003-3936
- CODEN
- ANCPAC
Conference
- Title
- 34. INSTN Metallurgy Symposium.
- Original Conference Title
- 34. Colloque de Metallurgie de l'INSTN
- Dates
- 18-19 Jun 1991.
- Place
- Saclay (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 24051143
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ELECTRONIC CIRCUITS; EXPERIMENTAL DATA; LET; MEV RANGE 10-100; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PROTONS; SATURNE II
- Descriptors DEC
- ACCELERATORS; BARYONS; CATIONS; CHARGED PARTICLES; CYCLIC ACCELERATORS; DATA; ELEMENTARY PARTICLES; ENERGY RANGE; ENERGY TRANSFER; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; INFORMATION; IONS; MEV RANGE; NUCLEONS; NUMERICAL DATA; RADIATION EFFECTS; SYNCHROTRONS