Published July 2008
| Version v1
Journal article
Recombination processes in semiconductors with deep impurities
- 1. Physical-Technical Institute, Tashkent (Uzbekistan)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Рекомбинация в полупроводниках с глубокими примесями
Publishing Information
- Journal Title
- Geliotekhnika
- Journal Issue
- no.4
- Journal Page Range
- p. 53-62
- ISSN
- 0130-0997
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 40047889
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CADMIUM SELENIDES; DEFECTS; ELECTRON-HOLE COUPLING; FERMI STATISTICS; FRENKEL DEFECTS; GALLIUM SULFIDES; N-TYPE CONDUCTORS; PHOTOCONDUCTIVE CELLS; RECOMBINATION; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COUPLING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; GALLIUM COMPOUNDS; MATERIALS; PHOTOELECTRIC CELLS; POINT DEFECTS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; VACANCIES; ZINC COMPOUNDS
Optional Information
- Notes
- 19 refs, 5 figs.