Published April 16, 1990 | Version v1
Journal article Metadata-only

Modification effect of Ni ion implantation on the electrical properties of vitreous As2Se3

Creators

  • 1. Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. za Yadrena Izsledvaniya i Yadrena Energetika

Description

Effects of Ni ion implantation on the electrical conductivity of vitreous As2Se3 in the temperature range 20 to 140deg C are presented. The dose dependence of the room temperature conductivity and of the activation energy are given and discussed. The results are in agreement with the conductivity changes obtained by co-sputtering of Ni and As2Se3

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
118
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
K83-K85
ISSN
0031-8965
CODEN
PSSAB

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
22020494
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; AMORPHOUS STATE; ARSENIC SELENIDES; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; ION BEAMS; ION IMPLANTATION; NICKEL ISOTOPES; RADIATION DOSES; SPUTTERING; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; BEAMS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ENERGY; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS