Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO3 film
- 1. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
Description
(5 at. %) cobalt-doped LiNbO3 (Co:LN) films were prepared by combinatorial laser molecular-beam epitaxy on Si (100). The Co:LN films with Co2+ replacing Nb exhibit room temperature ferromagnetism of 1.2μB/Co and Curie temperature of ∼540 K. Through a Ag/Co:LN/Si metal-ferroelectric-semiconductor field effect transistor configuration, ferroelectric measurements show that the films display hysteresis loops at 300 K and ferroelectric transition temperature of ∼610 K. The hysteresis and the asymmetry in capacitance-voltage and leakage-voltage curves are ascribed to trapping/detrapping process of charges at the Co:LN/Si interface. The coexistence of room temperature ferromagnetism and ferroelectricity makes Co:LN a promising single-phase multiferroic
Additional details
Identifiers
- DOI
- 10.1063/1.2952772;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 92
- Journal Issue
- 26
- Journal Page Range
- p. 262901-262901.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40003358
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; COBALT; COBALT IONS; CRYSTAL GROWTH; CURIE POINT; DOPED MATERIALS; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; HYSTERESIS; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NIOBATES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; FILMS; IONS; MAGNETIC MATERIALS; MAGNETISM; MATERIALS; METALS; NIOBIUM COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TRANSITION TEMPERATURE
Optional Information
- Notes
- (c) 2008 American Institute of Physics