Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode
- 1. Department of Nano-Photonics Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
- 2. School of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
- 3. School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
Description
Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.
Additional details
Identifiers
- DOI
- 10.1063/1.4953401;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 23
- Journal Page Range
- vp.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48035294
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHANNELING; CURRENT DENSITY; DEPLETION LAYER; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRON DENSITY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM WELLS; VISIBLE RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; LAYERS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2016 Author(s)