Published June 6, 2016 | Version v1
Journal article

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

  • 1. Department of Nano-Photonics Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
  • 2. School of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
  • 3. School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

Description

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
108
Journal Issue
23
Journal Page Range
vp.
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2016 Author(s)