Published January 9, 2008
| Version v1
Journal article
Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy
Creators
- 1. Beckman Institute for Advanced Science and Technology, University of Illinois, 405 North Mathews Avenue, Urbana, IL 61801-2325 (United States)
Description
We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2 x 1:H surface. Room temperature, ultrahigh vacuum tunneling spectroscopy measurements of nanometer-sized single layer graphene reveal a size-dependent energy gap ranging from 0.1 to 1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunneling microscopy topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/01/015704;
- PII
- S0957-4484(08)60703-5;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 1
- Journal Page Range
- p. 015704
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39040243
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHITE; LAYERS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; SURFACES; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT
- Descriptors DEC
- CARBON; ELEMENTS; MICROSCOPY; MINERALS; NONMETALS; TEMPERATURE RANGE