Published January 9, 2008 | Version v1
Journal article

Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy

  • 1. Beckman Institute for Advanced Science and Technology, University of Illinois, 405 North Mathews Avenue, Urbana, IL 61801-2325 (United States)

Description

We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2 x 1:H surface. Room temperature, ultrahigh vacuum tunneling spectroscopy measurements of nanometer-sized single layer graphene reveal a size-dependent energy gap ranging from 0.1 to 1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunneling microscopy topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics

Additional details

Identifiers

DOI
10.1088/0957-4484/19/01/015704;
PII
S0957-4484(08)60703-5;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
1
Journal Page Range
p. 015704
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39040243
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHITE; LAYERS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; SURFACES; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT
Descriptors DEC
CARBON; ELEMENTS; MICROSCOPY; MINERALS; NONMETALS; TEMPERATURE RANGE