The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique
Description
Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ((mu)TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods
Availability note (English)
Available from OSTI as DE00797330; www.osti.gov/servlets/purl/797330-my5vNJ/native/Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 4842 Kilobytes
- Report number
- IS-T--1981
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33068736
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- BAND THEORY; BRAGG REFLECTION; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; EMISSION SPECTRA; ENERGY GAP; LIGHT EMITTING DIODES; MOLDING; SEMICONDUCTOR MATERIALS; WAVELENGTHS
- Descriptors DEC
- FABRICATION; MATERIALS; REFLECTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA
Optional Information
- Contract/Grant/Project number
- W-7405-Eng-82
- Funding organization
- USDOE Office of Science (United States)