Peculiarities of indium and gallium telluride formation

Indium and gallium telluride synthesis using DTA methods and X-ray spectral analysis is investigated. It is shown that in the process of synthesis of compounds in the In-Te(.Ga-Te) system, irrespective of the initial charge composition, the interaction between indium and tellurium (gallium and tellurium) starts at 698 K (743 K), proceeds with In2Te3(Ga2Te3) formation and is characterized by the exothermal effect, the intensity of which depends on the ratio between charge mass and its surface. With the exception of In2Te3(Ga2Te3) and the peritectic In2Te5(GaTe3) compound compounds of another phase composition form from the charge of a corresponding stoichiometric composition at temperatures exceeding the melting temperature of In2Te3 (Ga2Te3) after complete melt homogenization and corresponding redistribution of chemical bonds